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Inventi Impact: Electronic Components

Articles

  • Inventi:eec/42496/21
    A 5-bit X-band GaN HEMT-Based Phase Shifter
    01-Jul-2021 Research 2021 : July - September
    Hsien-Chin Chiu, Chun-Ming Chen, Li-Chun Chang, Hsuan-Ling Kao

    In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique..................

    How to Cite this Article
    Attribution/ CC Compliant Citation: Chiu, Hsien-Chin, et al. "A 5-bit X-band GaN HEMT-Based Phase Shifter." Electronics 10.6 (2021): 658. https://doi.org/10.3390/electronics10060658 http://creativecommons.org/licenses/by/4.0/ Some formatting elements, header, footer, logos, dates and pagination were modified while adapting this article.
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